Earlier this week, OnePlus acknowledged that the OnePlus 12R 256GB variant is equipped with UFS 3.1 storage instead of the previously announced UFS 4.0, expressing regret for the error. During that announcement, the company encouraged customers who had purchased or pre-ordered the OnePlus 12R and wished to address the UFS discrepancy to reach out to the Customer Service team. Today, OnePlus has affirmed that buyers of the 256GB model have the option to request a full refund until March 16, 2024, by contacting the customer service team if they find the device unsatisfactory.
Kinder Liu, OnePlus President and COO said, “Thank you for your patience. I would like to share that our customer service teams are now fully briefed on the situation and have been helping those of you with concerns over the last few days. If you’ve received a OnePlus 12R 256GB variant and want to discuss the situation with the file system type on your phone, please contact Customer Service through your usual channel. They will be able to discuss the next steps with you, up to and including a refund until 16th March 2024.”
Liu added, “We’re still confident that the OnePlus 12R lives up to the high expectations you have of our devices, and that you will love it when you try it. But I also hope that our quick action shows that we value our relationship with you, our Community, and has helped restore your trust in us.”
What Happened?
OnePlus 12R drew a lot of flak from the people regarding the storage specifications. The company addressed concerns raised by users, confirming that the device features UFS 3.1 storage across all variants, contrary to initial reports suggesting the presence of UFS 4.0.
The controversy arose following discrepancies between what was initially stated by OnePlus and what users discovered upon closer inspection. At the time of the smartphone’s launch, OnePlus had indicated that the base 128GB variant would have UFS 3.1 storage, while the 256GB variant would boast the faster UFS 4.0 technology.
UFS 4.0 storage is renowned for its improved read-and-write speeds and enhanced thermal management capabilities, particularly beneficial for power users.
